symbol v ds v gs i dm t j , t stg symbol typ max 30 40 65 80 r q jl 20 25 junction and storage temperature range a p d c 3.1 2 -55 to 150 t a =70c i d 12.6 10 40 pulsed drain current b power dissipation a t a =25c continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted vv 12 gate-source voltage drain-source voltage 20 c/w maximum junction-to-ambient a steady-state c/w w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja AON3402 20v n-channel mosfet product summary v ds (v) = 20v i d = 12.6a (v gs = 4.5v) r ds(on) < 13m w (v gs = 4.5v) r ds(on) < 17m w (v gs = 2.5v) r ds(on) < 26m w (v gs = 1.8v) esd rating: 2000v hbm 100% rg tested general description the AON3402 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v while retaining a 12v v gs(max) rating.this device is suitable for use as load switch and general purpose fet application. dfn 3x3 top view bottom view pin 1 g ds top view 1 2 3 4 8 7 6 5 alpha & omega semiconductor, ltd. www.aosmd.com
AON3402 symbol min typ max units bv dss 20 v 10 t j =55c 25 i gss 10 m a bv gso 12 v v gs(th) 0.5 0.78 1 v i d(on) 40 a 10.3 13 t j =125c 14.4 18 14.3 17 m w 21.7 26 m w g fs 37 s v sd 0.73 1 v i s 4.8 a c iss 1810 pf c oss 232 pf c rss 200 pf r g 1.6 w q g 17.9 nc q gs 1.5 nc q gd 4.7 nc t d(on) 2.5 ns t r 7.2 ns t d(off) 49 ns t f 10.8 ns t rr 20.2 ns q rr 8 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =4.5v, v ds =10v, i d =12a gate source charge gate drain charge r ds(on) i s =1a,v gs =0v dynamic parameters v gs =0v, v ds =10v, f=1mhz m w v gs =2.5v, i d =10.5a maximum body-diode continuous current input capacitance output capacitance v gs =1.8v, i d =8.5a forward transconductance diode forward voltage v ds =5v, i d =12a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v i dss zero gate voltage drain current v ds =v gs i d =250 m a v ds =16v, v gs =0v v ds =0v, v gs =10v m a v gs =4.5v, v ds =5v v gs =4.5v, i d =12a gate-body leakage current static drain-source on-resistance gate-source breakdown voltage v ds =0v, i g =250ua gate threshold voltage body diode reverse recovery time body diode reverse recovery charge i f =12a, di/dt=100a/ m s reverse transfer capacitance turn-on rise time turn-off delaytime v gs =10v, v ds =10v, r l =1.0 w , r gen =3 w turn-on delaytime i f =12a, di/dt=100a/ m s switching parameters a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user 's specific board design. the current rating is bas ed on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. rev2: nov. 2010 alpha & omega semiconductor, ltd. www.aosmd.com
AON3402 typical electrical and thermal characteristics 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =1.5v 2v 2.5v 4.5v 10 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 v gs (volts) figure 2: transfer characteristics i d (a) 5 10 15 20 25 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =4.5v i d =12a v gs =2.5v i d =10.5a 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =2.5v v gs =4.5v i d =12a v gs =1.8v i d =8.5a v gs =1.8v 25c 125c alpha & omega semiconductor, ltd. www.aosmd.com
AON3402 typical electrical and thermal characteristics 0 1 2 3 4 5 0 4 8 12 16 20 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q qq q ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =10v i d =12a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =80c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 m s alpha & omega semiconductor, ltd. www.aosmd.com
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